Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 14, Issue 3, Pages H135-H138Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3531843
Keywords
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Funding
- National Science Council of the Republic of China [NSC 97-2112-M-110-009, NSC 98-2221-E-009-001, NSC 98-2221-E-009-002, NSC 98-3114-M-110-001]
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The resistive random access memory has attracted much attention for nonvolatile memory application in recent years. However, there is an issue about variations of switching parameters such as set voltage and conductivity of resistance state in resistive switching memory. The variations may cause not only switching error but also reading error during operation. We investigated the switching performance of binary metal oxide as a resistive switching layer embedded with and without metal nanocrystals. Compared with the conventional memory structure, the memory embedded with metal nanocrystals shows better stability, preferable uniformity for the next generation nonvolatile memory application. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3531843] All rights reserved.
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