Realization of Rectifying and Resistive Switching Behaviors of TiO2 Nanorod Arrays for Nonvolatile Memory

Both the rectifying and resistive switching behaviors are reported in single-crystalline TiO2 nanorod arrays (NRAs). The transition from rectifying to bipolar resistive switching behavior can be controlled by a forming process. The surface of TiO2 nanorods and the Pt/TiO2 NRAs interface play crucial roles on resistive switching. In low resistance state, the dependence of resistance on cell area indicates that filaments form on each individual nanorod, which contributes to the narrow distribution of resistive switching parameters. These results suggest that single-crystalline TiO2 NRAs could be used as nanowire-based switch element and memory cell for next-generation nonvolatile memory. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3617442] All rights reserved.