4.0 Article

Organic Field-Effect Transistor-Based Nonvolatile Memory Devices Having Controlled Metallic Nanoparticle/Polymer Composite Layers

Journal

ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 13, Issue 4, Pages H134-H136

Publisher

ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3299270

Keywords

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Funding

  1. Center for Materials and Processes of Self-assembly under MEST/KOSEF [R11-2005-048-00000-0]
  2. Korea Ministry of Knowledge Economy
  3. Korea government (MEST) [R01-2008-000-11994-0, 313-2008-2-D00597, 20090077593]
  4. World Gold Council [RP05-08]

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Nonvolatile memory devices based on the pentacene film and controlled gold nanoparticle (Au-np)/polymer composite layers were developed. Organic field-effect transistor-based nonvolatile memory devices having self-assembled Au-np exhibited controllable and reliable current level differences (on- and off-states) according to the applied gate voltages (programming/erasing operations). The memory devices showed large memory windows as well as good data retention properties by adopting charge storage layers of controlled Au-np separated by insulating polymer layers. The process for fabricating nonvolatile memory devices was based on the solution processes and organic semiconductor layers, so it has a potential use in flexible nonvolatile memory applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3299270] All rights reserved.

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