Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 13, Issue 9, Pages II324-II327Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3460302
Keywords
-
Funding
- Funding Program for World-Leading Innovative Research and Development on Science and Technology, Japan
Ask authors/readers for more resources
Photoresponses of an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO), are investigated by continuous-wave photocurrent measurements, which are discussed in terms of mobility-lifetime products (eta mu tau). It shows that a-IGZO has eta mu tau values larger than those of amorphous silicon, which originate from high Fermi levels as well as long photocarrier lifetime. Reversible and very slow photocurrent decays are observed with time constants > 10(3) s and associated activation energies similar to 0.9 eV. A metastable donor model and a photoreduction model are proposed to explain it. These results provide fundamental physical data for optoelectronic applications of a-IGZO. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3460302] All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available