Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 4, Pages H101-H104Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3065994
Keywords
bonding processes; elemental semiconductors; III-V semiconductors; indium compounds; integrated optics; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor laser arrays; silicon; silicon-on-insulator; spectral line shift; wafer bonding; X-ray diffraction
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We demonstrate the transfer of the largest (150 mm in diameter) available InP-based epitaxial structure to the silicon-on-insulator substrate through a direct wafer-bonding process. Over 95% bonding yield and a void-free bonding interface was obtained. A multiple quantum-well diode laser structure is well-preserved after bonding, as indicated by the high-resolution X-ray diffraction measurement and photoluminescence (PL) map. A bowing of 64.12 mu m is measured, resulting in a low bonding-induced strain of 17 MPa. PL measurement shows a standard deviation of 1.09% across the entire bonded area with less than 1.1 nm wavelength shift from the as-grown wafer.
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