Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 6, Pages H205-H207Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3109624
Keywords
aluminium; ammonium compounds; atomic layer deposition; gallium arsenide; III-V semiconductors; indium compounds; oxidation; passivation
Funding
- FCRP Materials, Devices, and Structures Center
- System IC 2010 (MKE in Korea)
- Irish Research Council for Science, Engineering and Technology
- Science Foundation Ireland [05/IN/1751]
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The effect of water and ozone as the oxidant in the atomic layer deposition (ALD) of aluminum oxide on the ammonium-sulfide-passivated In0.53Ga0.47As surface is compared using X-ray photoelectron spectroscopy (XPS) after each half-cycle of the ALD process. While the first half-cycle of the aluminum precursor tri-methyl aluminum (TMA) reduces the residual native oxides to within detection limits of XPS, the ozone oxidation process causes significant reoxidation of the substrate in comparison to the water-based process. Subsequent TMA pulses fail to remove the excess interfacial oxides caused by ozone oxidation, resulting in the formation of an oxide interlayer.
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