Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 4, Pages D22-D26Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3074333
Keywords
cerium compounds; elemental semiconductors; etching; hydrogen compounds; iron compounds; photoluminescence; porous semiconductors; semiconductor thin films; silicon; vanadium compounds
Funding
- West Chester University
- Center for Microscopy Research and Training at WCU
- Sonderforschungsbereich 616
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Stain etchants made from (HF+V(2)O(5)) or (HF+FeCl(3)center dot 6H(2)O+HCl or H(2)SO(4)) exhibited virtually no initiation time before the formation of porous silicon. Etching with Fe(III) solutions for extended periods resulted in a unique dual layer structure that can reach a thickness >10 mu m and exhibited not only red-orange but also green photoluminescence (PL). Etching with (CeF(4)+H(2)SO(4)) produced extremely uniform films. Visible PL was observed immediately after etching except for those films produced with (CeF(4)+H(2)SO(4)), which required several days of air exposure before bright and robust PL developed.
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