Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 8, Pages G40-G43Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3139603
Keywords
alumina; atomic layer deposition; energy gap; etching; Fermi level; gallium arsenide; III-V semiconductors; indium compounds; semiconductor-insulator boundaries; thermally stimulated desorption
Funding
- SRC Non-Classical CMOS Center [1437.003]
- Intel Corporation, and Science Foundation Ireland [05/IN/1751, 07/SRC/I1172]
- Irish Fulbright Commission and Fulbright USA
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An unpinned interface between an Al2O3 layer deposited by atomic layer deposition (ALD) and a chemically treated n-In0.53Ga0.47As(001) is demonstrated. The starting surface was prepared by wet etching with NH4OH(aq) followed by a thermal desorption of residual As at 380 degrees C immediately before ALD. Analysis of temperature-dependent capacitance-voltage measurements suggests that the Fermi level can sweep through the bandgap of In0.53Ga0.47As, attaining true accumulation and inversion despite the presence of In oxide and In hydroxide at the interface. This is in contrast to the situation for residual As-related interfacial species, which have been reported to pin the Fermi level at oxide/III-V interfaces.
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