Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 7, Pages H248-H251Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3117242
Keywords
annealing; copper; diffusion barriers; electrical resistivity; elemental semiconductors; metallic thin films; MIS structures; nanostructured materials; ruthenium; semiconductor-metal boundaries; silicon; transmission electron microscopy; tungsten compounds; X-ray diffraction
Funding
- National Center for Nanomaterials Technology
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A sputter-prepared Ru (7 nm)/WNx (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WNx into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/WNx bilayer barrier stack failed due to Cu diffusion attack after annealing at 750 degrees C for 30 min, while the Ru single layer failed after annealing at 450 degrees C by the formation of Cu silicide (eta(')-Cu3Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WNx film with a nanocrystalline structure embedded in an amorphous matrix.
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