Coplanar ZnO Thin-Film Transistor Using Boron Ion Doped Source/Drain Contacts

We studied a coplanar zinc oxide (ZnO) thin-film transistor (TFT) using boron ion doped source/drain contacts. The ZnO was sputtered using an Ar and O(2) mixture at a substrate temperature of 150 degrees C. The boron ion doped (similar to 10(15)/cm(2)) ZnO layer, having a sheet resistance of similar to 0.9 k Omega/square, was used as the source/drain contacts of the TFT. The coplanar ZnO TFT exhibited a field-effect mobility of 54.4 cm(2)/V s, a threshold voltage of 4.48 V, a gate voltage swing of 0.29 V/dec, and an on/off ratio of similar to 10(7). (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3184585] All rights reserved.