Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 9, Pages H329-H332Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3156835
Keywords
aluminium; annealing; doping profiles; electrical resistivity; hole density; hole mobility; II-VI semiconductors; nitrogen; plasma immersion ion implantation; semiconductor doping; semiconductor thin films; sputter deposition; vacancies (crystal); wide band gap semiconductors; zinc compounds
Funding
- National Natural Science Foundation of China [10775034]
- Shanghai Leading Academic Discipline [B113]
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p-Type Al-N co-doped ZnO[ZnO:(Al,N)] thin films are successfully fabricated by plasma immersion ion implantation technique assisted with co-doping method. Hole concentration, resistivity, and mobility of the optimum p-type ZnO:(Al,N) film obtained are 2.89x10(17) cm(-3), 6.87 cm, and 3.15 cm(2) V(-1) s(-1), respectively. O(*) plays an important role in the reactions of plasma for its production of N atoms. Implanted N atoms are activated by postannealing, occupy oxygen vacancies (V(O)), and form nitrogen substitutions (N(O)) at O sites.
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