Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 5, Pages G20-G22Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3089879
Keywords
buffer layers; dielectric hysteresis; dielectric polarisation; electrodes; ferroelectric storage; ferroelectric thin films; lead compounds; pulsed laser deposition; strontium compounds; X-ray diffraction; yttrium compounds; zirconium compounds
Funding
- BK21 project 2008
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We obtained preferentially (220)-oriented yttria-stabilized zirconia (YSZ) buffer layers on glass substrates by pulsed laser deposition. These preferentially (220)-oriented YSZ buffer layers enabled us to grow preferentially (100)-oriented SrRuO3 bottom electrodes. On the preferentially (100)-oriented SrRuO3 bottom electrodes, we obtained preferentially c-oriented PbZr0.48Ti0.52O3 (PZT) thin films, which were confirmed by an X-ray diffraction experiment. The highly c-oriented PZT thin films exhibited a high ferroelectric polarization of about 32 mu m/cm(2). We also checked a high storage density of about 10 Tbit/in(2) with a minimum bit size below 8 nm with the highly c-oriented PZT thin films by electric force microscope.
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