Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 4, Pages H135-H137Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3074332
Keywords
capacitor switching; capacitors; gas mixtures; leakage currents; random-access storage; semiconductor thin films; sputter deposition; titanium compounds
Funding
- National Tsing-Hua University of Taiwan, Republic of China
- Industrial Technology Research Institute of Taiwan, Republic of China
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TiO2 films were prepared on Pt/Ti/SiO2/Si substrates by radio-frequency reactive sputtering with a different gas mixture. Different constituents of crystalline phases of TiO2 were found by changing the oxygen content in a gas mixture. The influence of crystalline constituent on electrical and resistive switching properties of TiO2 was investigated. The Pt/TiO2/Pt capacitors show reversible and steady bistable resistance switching behavior. The leakage current in the high-resistance state is sensitive to the crystal phase composition of the TiO2 matrix; however, the current flowed through the films in the low-resistance state is hardly affected. Moreover, superior retention characteristics demonstrate the potential for nonvolatile memory applications.
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