Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 6, Issue 23, Pages 4786-4793Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.5b02332
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Funding
- National Science Foundation [1112569, 1510353]
- NSF IGERT: Materials Creation Training Program (MCTP) [DGE-0654431]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-76SF00515]
- Directorate For Engineering [1510353] Funding Source: National Science Foundation
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [1112569] Funding Source: National Science Foundation
- Div Of Chem, Bioeng, Env, & Transp Sys [1510353] Funding Source: National Science Foundation
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We demonstrate that solution-sequential processing (SqP) can yield heavily doped pristine-quality films when used to infiltrate the molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) into pure poly(3-hexylthiophene) (P3HT) polymer layers. Profilometry measurements show that the SqP method produces doped films with essentially the same surface roughness as pristine films, and 2-D grazing-incidence wide-angle X-ray scattering (GIWAXS) confirms that SqP preserves both the size and orientation of the pristine polymer's crystallites. Unlike traditional blend-cast F(4)TCNQ/P3HT doped films, our sequentially processed layers have tunable and reproducible conductivities reaching as high as 5.5 S/cm even when measured over macroscopic (>1 cm) distances. The high conductivity and superb film quality allow for meaningful Hall effect measurements, which reveal p-type conduction and carrier concentrations tunable from 10(16) to 10(20) cm(-3) and hole mobilities ranging from similar to 0.003 to 0.02 cm(2) V-1 s(-1) at room temperature over the doping levels examined.
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