Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 6, Issue 21, Pages 4189-4193Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.5b01900
Keywords
-
Ask authors/readers for more resources
Studying the phonons of hexagonal boron nitride (h-BN) is important for understanding its thermal, electronic, and imaging applications. Herein, we applied high-resolution electron energy loss spectroscopy (HREELS) to monitor the presence of edge defects in h-BN films. We observed an edge phonon at 90.5 meV with the initial formation of island-like domains on Ru(0001), which subsequently weakens with respect to the bulk phonon as the islands congregate into a film. The presence of a weak edge phonon peak even at full surface coverage of the h-BN film indicates the sensitivity of HREELS in detecting line defects. A shoulder peak at similar to 160 meV assignable to sp(3) bonded modes was attributed to grain boundaries arising from misaligned domains. In addition, the strengths of substrate interaction and the rippling of the h-BN film can be judged from the shift in the phonon energy of the out-of-plane TQ(perpendicular to) mode.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available