Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 6, Issue 13, Pages 2649-2656Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.5b00909
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- BES Division of the U.S. DOE
- Delta Dental Health Associates
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Climate Change and Emissions Management (CCEMC) Corporation
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Ultrafast exciton and charge-carrier dynamics in InGaN/GaN nanowires (NWs) with and without Rh/Cr2O3 nanoparticle (NP) decoration have been investigated using femtosecond transient absorption (TA) techniques with excitation at 415 nm and white-light probe (450-700 nm). By comparing the TA profiles between InGaN/GaN and InGaN/GaN-Rh/Cr2O3 NWs, an additional decay component on the medium time scale (similar to 50 ps) was identified with Rh/Cr2O3 decoration, which is attributed to interfacial charge transfer from InGaN/GaN NWs to Rh/Cr2O3 NPs, desired for light energy conversion applications. This is consistent with reduced photoluminescence (PL) of the NWs by the Rh/Cr2O3 NPs. A kinetic model was developed to explain the TA results and gain further insight into the exciton and charge-carrier dynamics.
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