Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 119, Issue 32, Pages 18014-18021Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.5b03867
Keywords
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Funding
- National Natural Science Funds for Excellent Young Scholar [21322402]
- National Natural Science Foundation of China [U1301243, 21373114, 21274064, 21144004, 60876010, 61177029, 20974046, 61136003]
- State Key Laboratory of Supramolecular Structure and Materials at Jilin University [sklssm2015022]
- Doctoral Fund of Ministry of Education of China [20133223110007]
- Excellent science and technology innovation team of Jiangsu Higher Education Institutions
- Synergetic Innovation Center for Organic Electronics and Information Displays
- Natural Science Foundation of Jiangsu Province, China [BK2008053, SJ209003, BM2012010]
- Priority Academic Program Development of Jiangsu Higher Education Institutions, PAPD [YX03001]
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As a fascinating information storage device, organic transistor memory based on molecular charge storage elements (MCSEs) has attracted great research interest. However, the charge storage mechanism of MCSEs is ambiguous due to their complex charge dynamic behaviors. Herein, the dipole moment effects on the charge trapping process and the performance of transistor memory are revealed based on cruciform spiro[fluorene-9,9'-xanthene] (SFXs), incorporating cyano moieties, as the typical electron- withdrawing substitution. The characterization of electrostatic potential (ESP) calculation, UV-vis, photoluminescence, and crystallography of SFXs shows the SFXs MCSEs with weaker dipole moment through symmetrical substitution. A series of prototype transistor memories based on SFXs exhibit an erasable type feature with smart photoresponsive behavior. The weaker dipole moment ones possess larger memory window (similar to 40 V), higher charge trapping density (>1 X 10(13) cm(-2)), and higher programming speed (10(14)-10(11) cm(-2) s(-1)). The hole trapping process is dominated by the dipole moment rather than the charge dissipation when compared with different SFXs at the same HOMO level. Rather good charge retention property (>10(4) s) and large on/off ratio (similar to 10(4)) are obtained by blending SFXs with polymer dielectrics in optimized devices. The dipole moment effects on the charge trapping behavior provide not only the design of high performance transistor memory but also the smart information encryption in future data storage.
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