Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 119, Issue 4, Pages 1706-1713Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp510877g
Keywords
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Funding
- National Research Foundation of Korea (NRF) - Korea government [NRF-2012R1A1A2006936, NRF-2014R1A2A1A11053109]
- New AMP
- Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant - Korea government
- Ministry of Trade, Industry and Energy [20123010010130]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20123010010130] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2012R1A1A2006936] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We fabricated polycrystalline Cu(2)ZnGe(x)Sn(1-x)Q(4) (Q = S or Se) thin films by using spray-based deposition. The effects of Ge alloying were studied by X-ray diffraction (XRD), Raman spectroscopy, and UVvisible spectroscopy. XRD and Raman spectroscopy revealed that lattice parameters decreased linearly and characteristic Raman peaks shifted to higher frequency with increasing Ge alloying. The band gap energies of postsulfurized CZGTS films (1.51 +/- 0.05 to 1.91 +/- 0.05 eV) and postselenized CZGTSe films (1.07 +/- 0.05 to 1.44 +/- 0.05 eV) increased almost linearly with an increase of Ge alloying in the respective films. Analysis of band gap bowing model showed a small bowing constant b similar to 0.1 +/- 0.02 eV, indicating high miscibility of alloyed elements. The band gap tuning of CZGTS(Se) thin films can be utilized for tuning band gap of subcell in multijunction cell and for band gap graded photoabsorber of high efficient solar cell.
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