Journal
ACS NANO
Volume 9, Issue 11, Pages 10580-10589Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b03682
Keywords
semiconductor; nanowire; InP; InAs; heterostructure; self-assembly; photolithography; bottom-up
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Funding
- Japanese Society for the Promotion of Science [23310097]
- Grants-in-Aid for Scientific Research [15H05735] Funding Source: KAKEN
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This work presents a method that bridges the gap between the nanometer-scale bottom-up and micrometer-scale top-down approaches for site-defined nanostructures, which has long been a significant challenge for applications that require low-cost and high-throughput manufacturing processes. We realized the bridging by controlling the seed indium nanoparticle position through a self-assembly process. Site-defined InP nanowires were then grown from the indium-nanoparticle array in the vapor liquid solid mode through a seed and grow process. The nanonneter-scale indium particles do not always occupy the same locations within the micrometer-scale open window of an InP exposed substrate due to the scale difference. We developed a technique for aligning the nanometer-scale indium particles on the same side of the micrometer-scale window by structuring the surface of a misoriented InP (111)B substrate. Finally, we demonstrated that the developed method can be used to grow a uniform InP/InAs axial-heterostructure nanowire array. The ability to form a heterostructure nanowire array with this method makes it possible to tune the emission wavelength over a wide range by employing the quantum confinement effect and thus expand the application of this technology to optoelectronic devices. Successfully pairing a controllable bottom-up growth technique with a top-down substrate preparation technique greatly improves the potential for the mass-production and widespread adoption of this technology.
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