Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 119, Issue 11, Pages 5995-6000Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp511562t
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Funding
- National Natural Science Foundation of China [11175229]
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The pre-H2O treatment and Al2O3 film growth under a two-temperature-regime mode in an oxygen-deficient atomic layer deposition (ALD) chamber can induce n-type doping of graphene, with the enhancement of electron mobility and no defect introduction to graphene. The main mechanism of n-type doping is surface charge transfer at graphene/redox interfaces during the ALD procedure. More interestingly, this n-type doping of graphene is reversible and can be recovered by thermal annealing, similar to hydrogenated graphene (graphane). This technique utilizing pre-H2O treatment and an encapsulated layer of Al2O3 achieved in an oxygen,deficient ALD chamber provides a simple and novel route to fabricate n-type doping of graphene.
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