Journal
ACS NANO
Volume 9, Issue 8, Pages 7904-7912Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn506512j
Keywords
2D semiconductor; contact; current saturation; field-effect transistor; molybdenum disulfide; Schottky barrier; transition metal dichalcogenides
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Funding
- Air Force Office of Scientific Research, Arlington, VA, USA [FA9550-14-1-0268 (R18641)]
- MRSEC Program of the NSF [DMR 1121053]
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Metal contacts to atomically thin two-dimensional (2D) crystal based FETs play a decisive role in determining their operation and performance. However, the effects of contacts on the switching behavior, field-effect mobility, and current saturation of monolayer MoS2 FETs have not been well explored and, hence, is the focus of this work. The dependence of contact resistance on the drain current is revealed by four-terminal-measurements. Without high-kappa dielectric boosting, an electron mobility of 44 cm(2)/(V.s) has been achieved in a monolayer MoS2 FET on SiO2 substrate at room temperature. Velocity saturation is identified as the main mechanism responsible for the current saturation in back-gated monolayer MoS2 FETs at relatively higher carrier densities. Furthermore, for the first time, electron saturation velocity of monolayer MoS2 is extracted at high-field condition.
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