4.6 Article

Reversible photo-induced deformation of amorphous carbon nitride thin films

Journal

DIAMOND AND RELATED MATERIALS
Volume 41, Issue -, Pages 20-24

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2013.11.001

Keywords

Amorphous; Carbon nitride; Sputtering; Semiconductor; Photo-induced phenomena

Ask authors/readers for more resources

A reversible photo-induced deformation was found in amorphous carbon nitride (a-CNx) thin films prepared by reactive radio frequency magnetron sputtering method. The a-CNx films were deposited on a rectangular shaped ultrathin Si substrate at different temperatures in the range of room temperature (RT) to 600 degrees C A deflection of a-CNx/Si bilayer system was measured using optical cantilever technique with laser light. The bending signal indicates contraction of the film under illumination. The deflection increased with increasing the intrinsic stress of a-CNx films. An increase the ratio of deflection to the intrinsic stress corresponds to an expansion of optical band gap. As a result of Raman spectra, the photo-induced deformation was found to be inhibited with increasing sp(2) cluster size. (C) 2014 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available