Journal
DIAMOND AND RELATED MATERIALS
Volume 35, Issue -, Pages 36-39Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2013.03.009
Keywords
Ultrananocrystalline diamond; Nitrogen vacancy; Plasma; Photoluminescence; Color center
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Funding
- National Science Council of the Republic of China [NSC 99-2119-M-009-004-MY3]
- MOE ATU program
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Raman, photoluminescence, and transport properties of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. We speculate that the plasma generated vacancies in UNCD films and provided heat for further mobilizing the vacancies to combine with the impurities, which led to the formation of the silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) defect centers. The generated color centers were found to be distributed uniformly in the samples using all mapping technique. The PL emitted by the plasma treated nitrogen-doped UNCD film was strongly enhanced in comparison with the untreated films. (C) 2013 Elsevier B.V. All rights reserved.
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