Journal
DIAMOND AND RELATED MATERIALS
Volume 19, Issue 5-6, Pages 423-427Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2009.12.016
Keywords
Plasma fluorination; XPS; Diamond electrode
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We report on the effects of CF4 plasma process in technical RF barrel reactor on surface termination and the resulting electronic surface barrier of boron-doped diamond in electrolytes. The surface characteristics were evaluated for epitaxial single crystalline layers with sub-nm roughness. The capacitance-voltage characteristics of the processes electrodes implied a low electronic barrier at the fluorine-terminated areas, comparable to hydrogen termination in literature. However carbon-oxygen groups were still present on approx. 15% of the surface area after the plasma process. To analyse the electronic barrier of the fluorinated diamond, we proposed an electrical model of two parallel metal-oxide-semiconductor structures. This model included fixed parameters derived from the analysis of a diamond electrode exposed to plasma oxidation. (C) 2010 Elsevier B.V. All rights reserved.
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