Journal
DIAMOND AND RELATED MATERIALS
Volume 19, Issue 1, Pages 1-6Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2009.09.015
Keywords
Wide bandgap; Power semiconductor devices; Semiconductor materials
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Temperature dependent properties of wide bandgap semiconductors have been used to calculate theoretical specific on-resistance. breakdown voltage, and thermal run-away temperature in SiC GaN, diamond, and Si vertical power devices for comparison It appears mainly that diamond is interesting for high power devices for high temperature applications. At room temperature, diamond power devices should be superior to SiC only for voltage higher than 30-40 kV due to the high energy activation of the dopants (C) 2009 Elsevier B.V. All rights reserved
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