Journal
DIAMOND AND RELATED MATERIALS
Volume 18, Issue 5-8, Pages 764-767Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2009.01.016
Keywords
Diamond; p-i-n junction; Electrical property; Light emission
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We have succeeded in fabricating a (111)-oriented diamond p-i-n junction with high crystalline quality intrinsic layer and with low series resistance. The series resistance of this diamond p-i-n junction was improved by decreasing the resistivity and specific contact resistance of n-type layer, which is allowed to inject higher current while maintaining lower junction temperature. Current density-voltage characteristics showed a rectification ratio of 10(6) at +/- 15 V at room temperature. A clear ultraviolet emission at around 235 nm due to free exciton recombination was observed at a forward current, while the broad visible light emission from deep levels was significantly suppressed. Moreover, stronger excitonic emission by two orders of magnitude than that of (001)-oriented diamond p-i-n junctions with high series resistance was realized. (C) 2009 Elsevier B.V. All rights reserved.
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