Journal
DIAMOND AND RELATED MATERIALS
Volume 17, Issue 7-10, Pages 1212-1215Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2008.01.005
Keywords
diamond; transient grating technique; carrier lifetime; carrier diffusion
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The key electronic parameters of high-pressure-high-temperature and chemical-vapor-deposition grown diamonds have been determined at interband (hv=5.82 eV) or below bandgap (hv=4.68 eV) photoexcitation, using a picosecond transient grating (TG) technique. TG kinetics directly provided the values of ambipolar diffusion coefficient (6-10 cm(2)/s) and carrier lifetime (in a range from 0.17 to 2.8 ns) for crystals grown under different conditions. The carrier diffusion length was found to vary from 0.5 mu m in CVD layers to 1.6 mu m for IIa type HPHT diamond crystal. The carrier lifetimes correlated well with the nitrogen-related defect density in both types of diamonds. (C) 2008 Elsevier B.V. All rights reserved.
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