Diamond MISFET based on boron delta-doped channel

The delta doping concept has been successfully applied to a diamond field effect transistor structure with an Al2O3 gate diode, resulting in full channel carrier activation at room temperature and channel current modulation with complete pinch-off. Using a gate recess configuration, a channel current density of 30 mA/mm with a gate length L-G of 0-8 mu m has been obtained with semi-enhancement mode operation. First RF measurements have resulted in f(T) and f(max) cut-off frequencies of approx. 1 GHz and 3 GHz respectively. (C) 2008 Elsevier B.V. All rights reserved.