Journal
DIAMOND AND RELATED MATERIALS
Volume 17, Issue 7-10, Pages 1292-1296Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2008.01.011
Keywords
ICP etch; chlorine-based plasma; micro-optics; surface smoothing
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The effect of Inductively-Coupled Plasma (ICP) etching on diamond using chlorine-based plasma has been investigated. The diamond materials studied include type IIa natural diamond, High Pressure and High Temperature (HPHT) diamond and Chemical Vapour Deposition (CVD) diamond, It was found that argon and chlorine (Ar/Cl-2) ICP plasma etching can improve the smoothness of the diamond surface. By using this method, a minimum root-meansquared (rms) surface roughness of 0.19 nm has been achieved. To demonstrate optimized Ar/Cl-2 plasma etching, diamond spherical micro-lenses and micro-trenches were fabricated. Compared to argon and oxygen (Ar/O-2) plasma etching, Ar/Cl-2 plasma etching has a low selectivity with respect to the photo-resist mask, which enables an accurate control over the dimensions of the microstructures fabricated. The surface quality and profiles of these microlenses and micro-trenches were characterized by atomic force microscopy (AFM) and were shown to be better than those fabricated by Ar/O-2 ICP plasma. (C) 2008 Elsevier B.V. All rights reserved.
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