Journal
ACS NANO
Volume 9, Issue 3, Pages 3192-3198Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b00497
Keywords
two-dimensional (2D) materials; ambipolar; black phosphorus; electric-double-layer transistor (EDLT); insulator-to-metal transition; capacitance; localization
Categories
Funding
- Strategic International Collaborative Research Program (SICORP-LEMSUPER) of the Japan Science and Technology Agency from JSPS [25000003]
- Grants-in-Aid for Scientific Research [25000003] Funding Source: KAKEN
Ask authors/readers for more resources
We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration.. The transfer curve clearly exhibits ambipolar transistor behavior with an ON OFF ratio of similar to 5 x 10(3). The band gap was determined as congruent to 0.35 eV from the transfer curve, and,Hall-effect measurements revealed-that the hole mobility was,similar to 190 cm(2)/(Vs) at 170K, Which is 1 order of Magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of similar to 10(14) cm(-2), an electric-field-induced transition from the-insulating state to the Metallic state was realized, due to both electron and hole doping. Out results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available