Journal
JOURNAL OF NUCLEAR MATERIALS
Volume 466, Issue -, Pages 322-327Publisher
ELSEVIER
DOI: 10.1016/j.jnucmat.2015.08.004
Keywords
SiC; Joining; Electric current assisted sintering
Funding
- National Natural Science Foundation of China [91226202, 91426304]
- Hundred Talents Program of the Chinese Academy of Sciences [KJCX2-EW-H06]
- Natural Science Foundation of Zhejiang Province [LY15E020007]
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Commercial SiC ceramics were joined by electric field-assisted sintering technology using a Ti3SiC2 (TSC) tape film. A SiC/TSC/SiC joining sample with bend strength of 80.4 MPa was obtained at a low joining temperature of 1300 degrees C within a total time of 15 min. Three simple failure mechanism models were established, and the failure mechanisms of the joints joined at different temperatures were then revealed. The element diffusion and phase transition behaviour in the joining interface were investigated. (C) 2015 Elsevier B.V. All rights reserved.
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