Journal
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
Volume 18, Issue 2, Pages 53-61Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.cossms.2013.07.002
Keywords
Oxide electronics; Amorphous oxide semiconductor (AOS); Thin-film transistor (TFT); Flat-panel displays; Indium gallium zinc oxide (IGZO); Active-matrix liquid crystal display (AMLCD); Active-matrix organic light-emitting diode (AMOLED)
Funding
- National Science Foundation under the Center for Chemical Innovation [CHE-1102637]
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [1102637] Funding Source: National Science Foundation
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Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) invented only one decade ago are now being commercialized for active-matrix liquid crystal display (AMLCD) backplane applications. They also appear to be well positioned for other flat-panel display applications such as active-matrix organic light-emitting diode (AMOLED) applications, electrophoretic displays, and transparent displays. The objectives of this contribution are to overview AOS materials design; assess indium gallium zinc oxide (IGZO) TFTs for AMLCD and AMOLED applications; identify several technical topics meriting future scrutiny before they can be confidently relied upon as providing a solid scientific foundation for underpinning AOS TFT technology; and briefly speculate on the future of AOS TFTs for display and non-display applications. (C) 2013 Elsevier Ltd. All rights reserved.
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