Journal
CURRENT APPLIED PHYSICS
Volume 14, Issue 9, Pages 1273-1276Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2014.06.026
Keywords
Ellipsometry; InAlP; Dielectric function; Critical point
Funding
- Kyung Hee University [KHU-20130161]
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [2013-016297]
- World Class University Program through the Korea Science and Education Foundation - Ministry of Science, Engineering, and Technology [R33-2008-0000-10118-0]
- KIST institutional program
- GRL Program through MEST
- Republic of China [NSC-101-2112-M-001-024-MY3]
- Dream project
- [2012K001280]
Ask authors/readers for more resources
We report pseudodielectric functions from 1.5 to 6.0 eV of InxAl1 (-) P-x ternary alloy films. Data were obtained by spectroscopic ellipsometry on 1.2 mu m thick films grown on (001) GaAs substrates by molecular beam epitaxy. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations using the linear augmented Slater-type orbital method. (C) 2014 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
