Journal
CURRENT APPLIED PHYSICS
Volume 12, Issue 2, Pages 369-372Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2011.07.033
Keywords
Oxygen vacancy; Bipolar resistance switching; Interface; NiO; Epitaxy
Funding
- BK21 Foundation of Korea
- KOSEF [R17-2008-33-01000-0]
- Converging Research Center through the Ministry of Education, Science and Technology [2010K00106]
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [20100029421]
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We investigated bipolar resistance switching (RS) behavior of a top electrode/epitaxial NiO using Al and Pt as the top electrodes (TEs) and epitaxial NiO deposited at 500 degrees C (NiO-500) and 700 degrees C (NiO-700). We found that the contact between Al and Pt TEs and NiO-500 was a high resistance insulating contact, while the contact between the two TEs and NiO-700 was a low-resistance metallic contact. We also found that only NiO-500 with the Pt TE exhibited bipolar RS after an electroforming process. This study suggests that during the formation of the Pt/NiO-500 interface, the amount and behavior of oxygen at the interface seem to play the most important role in bipolar RS behavior. In order to improve the device performance, better control of oxygen content and its movement at the interface seems necessary. (C) 2011 Elsevier B. V. All rights reserved.
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