Journal
CURRENT APPLIED PHYSICS
Volume 12, Issue 2, Pages 521-524Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2011.08.013
Keywords
SAW UV sensor; ZnO film; 3C-SiC buffer layer
Funding
- Korea Research Foundation
- Korean Government
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Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) ultraviolet (UV) sensing using a magnetron sputtering system. X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO film grown on 3C-SiC/Si had a dominant c-axis orientation, a lower residual stress, and higher intensity of luminescence at 380 nm of ZnO thin film. The SAW resonator UV detector were fabricated on ZnO/Si structures with a 3C-SiC buffer layer. The SAW resonator exposed under UV illumination had a linear response with sensitivity of 85 Hz/(mu W/cm(2)) in ZnO/3C-SiC/Si structures, as compared to 25 Hz/(mu W/cm(2)) in ZnO/Si structures with UV intensity varied until 600 mu W/cm(2). (C) 2011 Elsevier B. V. All rights reserved.
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