Ferroelectric properties of Mn-doped BiFeO3 thin films

Bi(Fe0.99Mn0.01)O-3 thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrates by pulsed laser deposition at various deposition temperature, such as at 520 degrees C, 530 degrees C, and 540 degrees C, respectively. The film deposited at 540 degrees C exhibited better ferroelectric property such as large remnant polarization (2P(r) = 139 mu C/cm(2)) and low coercive field (2E(c) = 630 kV/cm). However, high leakage current density was observed especially in a high electric field range. The improvements were attributed to the facts of highly (111)-preferred orientation and uniform large grain size when the film was deposited at 540 degrees C. (C) 2011 Elsevier B.V. All rights reserved.