Journal
CURRENT APPLIED PHYSICS
Volume 11, Issue 5, Pages 1111-1125Publisher
ELSEVIER
DOI: 10.1016/j.cap.2011.05.017
Keywords
Ferroelectrics; Polarization; Domain switching; Piezoresponse force microscopy; Defects; Thin films
Funding
- Ministry of Education, Science and Technology (MEST) [2009-0080567, 2010-0020416, 2010-0008341]
- National Research Foundation of Korea [2010-0008341] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Recent developments in ferroelectric (FE) domain imaging techniques have established an understanding of intriguing polarization switching dynamics. In particular, nanoscale studies of FE domain switching phenomena using piezoresponse force microscopy (PFM) can provide important microscopic details on nucleation and subsequent growth of domains, complementing conventional electrical measurements that only give macroscopic information. This review covers recent nanoscale PFM studies of domain switching dynamics in FE thin films. Recent nanoscale PFM-based studies have demonstrated that quenched defects inside the FE thin films play important roles in domain switching processes, including defect-mediated inhomogeneous nucleation, pinning-dominated nonlinear dynamics of domain walls, and many other intriguing phenomena. (C) 2011 Elsevier B.V. All rights reserved.
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