Journal
CURRENT APPLIED PHYSICS
Volume 9, Issue 5, Pages 943-945Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2008.08.055
Keywords
Photoluminescence; Metal-organic chemical vapor deposition; Gallium nitride
Funding
- National Research Council of Science & Technology (NST), Republic of Korea [K09007] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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InGaN/GaN multiple-quantum-well (MQW) structure with Si-doped InGaN electron-emitting layer (EEL) was grown by metal-organic chemical vapor deposition and their characteristics were evaluated by photoluminescence (PL) measurements. In a typical Structure, a low indium composition and wide potential well was used to be an EEL, and a six-fold MQW was used to be an active layer where the injected carriers recombine. By comparing the PL spectral characteristics of the MQW samples, the PL intensity of MQW with EEL is about 10 times higher than that of typical MQW. Experimental results indicate that the high electron capture rate of the MQW active region can be achieved by employing EEL. (C) 2008 Elsevier B.V. All rights reserved.
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