4.4 Article

Perimeter leakage current in polymer light emitting diodes

Journal

CURRENT APPLIED PHYSICS
Volume 9, Issue 2, Pages 414-416

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2008.03.018

Keywords

Leakage currents; Edge shunt; Light emitting diodes

Funding

  1. Spanish Ministry of Education and Science [CSD2007-00007]
  2. European Science Foundation and Ministerio de Educacion y Ciencia [MAT2006-28187-E]
  3. Program Ramon y Cajal

Ask authors/readers for more resources

Observation of leakage current paths through the device perimeter in standard poly(phenylene vinylene)-based light-emitting devices is reported. Perimeter leakage currents govern the diode performance in reverse and low positive bias and exhibit an ohmic character. Current density correlates with the perimeter-to-area ratio thus indicating that leakage currents are mainly confined on polymer regions in the vicinity of metallic contact limits (device perimeter). (C) 2008 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available