Journal
CURRENT APPLIED PHYSICS
Volume 9, Issue 2, Pages 414-416Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2008.03.018
Keywords
Leakage currents; Edge shunt; Light emitting diodes
Funding
- Spanish Ministry of Education and Science [CSD2007-00007]
- European Science Foundation and Ministerio de Educacion y Ciencia [MAT2006-28187-E]
- Program Ramon y Cajal
Ask authors/readers for more resources
Observation of leakage current paths through the device perimeter in standard poly(phenylene vinylene)-based light-emitting devices is reported. Perimeter leakage currents govern the diode performance in reverse and low positive bias and exhibit an ohmic character. Current density correlates with the perimeter-to-area ratio thus indicating that leakage currents are mainly confined on polymer regions in the vicinity of metallic contact limits (device perimeter). (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available