Journal
CRYSTENGCOMM
Volume 16, Issue 11, Pages 2273-2282Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ce42266f
Keywords
-
Categories
Funding
- Nanotechnology Platform Project (NIMS Nanofabrication Platform) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
- Grants-in-Aid for Scientific Research [14F04366, 25000011] Funding Source: KAKEN
Ask authors/readers for more resources
In this paper, we demonstrate a scalable process for the precise position-controlled selective growth of GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using a pulsed-mode growth technique. The location, orientation, length, and diameter of each GaN nanowire are controlled via pulsed-mode growth parameters such as growth temperature and precursor injection and interruption durations. The diameter and length of each GaN nanowire are in the ranges of more than 240 nm and 250-1250 nm, respectively, with different vertical-to-lateral aspect ratios that depend on the growth temperature. Also, it is found that a higher growth temperature helps increase the vertical growth rate and reduces the lateral growth rate of GaN nanowire arrays. Furthermore, in the case of longer TMGa injection duration, the Ga-rich region allows the higher lateral growth rate of GaN nanostructures, which leads to a transition in the morphology from nanowires to a thin film, while in the case of longer NH3 injection duration, the surface morphology changes from nanowires to pyramidal structures. In addition, the surface structure can also be controlled by varying the precursor interruption duration. Finally, we report and discuss a growth model for GaN nanowire arrays under pulsed-mode MOCVD growth.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available