Journal
CRYSTENGCOMM
Volume 16, Issue 34, Pages 8058-8063Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ce01003e
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Funding
- National Key Basic Research Program of China [2011CB301901]
- National Natural Science Foundation of China [61322406, 61274038, 61204070, 51072195]
- Jilin Provincial Science & Technology Department [20140520116JH]
- State Key Laboratory of Luminescence and Applications [SKLLA201301]
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We proposed a method, i.e., stress-induced in situ epitaxial lateral overgrowth (ELO), for growing high-quality GaN heteroepilayers, and demonstrated its feasibility using both theory and experiment. Theoretical analysis by finite element simulation indicated that at a proper lattice mismatch, GaN islands formed during initial growth, continued to grow up to a stable state and finally coalesced into a film. To evaluate the effectiveness of the theoretical analysis, GaN films were grown on AlN/sapphire and GaN/sapphire templates. The experimental results showed that the stress at the interface between AlN and GaN initially caused separate GaN islands to form; subsequently, new islands stopped growing, and the islands displayed lateral growth until they coalesced into a film; however, GaN grown on GaN/sapphire always showed layer-by-layer growth, from the initial stage through to the final stage of growth. Therefore, the experimental results are consistent with the theoretical analysis, and stress-induced in situ ELO is a promising method for growing high-quality GaN films on suitable lattice-mismatched substrates, which is effective not only for growing GaN, but also for other lattice-mismatched epitaxial growth.
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