Journal
CRYSTENGCOMM
Volume 16, Issue 44, Pages 10255-10261Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ce01339e
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Funding
- EU Framework 7 [FP7-SPA-2010-263044]
- Spanish Government [MAT2011-29255-C02-02, TEC2010-21574-C02-02]
- Catalan Authority [2009SGR235]
- Conserjeria de Educacion de la Junta de Castilla y Leon [VA166A11-2]
- UCC Strategic Research Fund
- Irish Research Council New Foundations Award
- Generalitat de Catalunya [2013FI-B2 00108]
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LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been developed using porous semiconductors. Here, the growth of porous GaN epitaxial layers oriented along the [ 0001] crystallographic direction on Al2O3, SiC, AlN and GaN substrates is demonstrated. A lattice mismatch between the substrate and the porous GaN layer directly affects the structure and porosity of the porous GaN layer on each substrate. Deposition of unintentionally doped n-type porous GaN on non-porous p-type GaN layers allows for the fabrication of high quality rectifying p-n junctions, with potential applications in high brightness unencapsulated GaN-based light emitting diodes and high surface area wide band gap sensor devices.
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