4.7 Article

Towards the epitaxial growth of silver on germanium by galvanic displacement

Journal

CRYSTENGCOMM
Volume 16, Issue 43, Pages 10028-10033

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ce01553c

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Funding

  1. Alberta Innovates

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This work focuses on the synthesis and interfacial characterization of silver films grown on Ge(111) surfaces. The synthetic approach uses galvanic displacement, a type of electroless deposition that takes place in an efficient manner under aqueous and room temperature conditions. The case of silver-on-germanium has been widely studied and used for several applications, and yet a number of important fundamental questions remain in order to address the nature of these interfaces. Interfacial characterization reveals no evidence for the intermetallic nature of Ag-Ge interfaces and suggests the diffusion of silver into the germanium substrate. The texture nature of the grown silver films was investigated via pole figure X-ray diffraction (XRD) and cross-section nano-beam-diffraction transmission electron microscope (TEM) analyses, indicating the epitaxial growth of silver films on germanium lattices by galvanic displacement at ambient conditions.

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