4.7 Article

A unique strategy for improving top contact in Si/ZnO hierarchical nanoheterostructure photodetectors

Journal

CRYSTENGCOMM
Volume 14, Issue 9, Pages 3015-3018

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c2ce06715c

Keywords

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Funding

  1. National Natural Science Foundation of China (NSFC) [50902004, 11023003, 10974003]
  2. China's Ministry of Science and Technology [2009CB623703, 2011CB707600, MOST]
  3. International Science & Technology Cooperation Program of China
  4. Sino Swiss Science and Technology Cooperation Program [2010DFA01810]
  5. FP7 EU IRSES (MICROCARE) [247641]

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Three-dimensional p-Si nanopillar/n-ZnO nanowire-array hierarchical nanoheterostructure photodetectors were achieved via a highly accessible and controllable fabrication process. By introducing PMMA to provide a flat, continuous and uniform surface, unique high transparency, low resistance top contact has been fabricated. The improved front electrode showed very small sheet resistivity of 0.002 Omega cm, two orders of magnitude lower than that of direct deposition of ITO onto ZnO (0.58 Omega cm).

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