4.7 Article

Flux growth of Yb3+-doped RE2O3 (RE = Y,Lu) single crystals at half their melting point temperature

Journal

CRYSTENGCOMM
Volume 13, Issue 16, Pages 5220-5225

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c1ce00015b

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Funding

  1. Aquitaine Region
  2. GIS Advanced Materials in Aquitaine
  3. pole de competitivite photonics in Aquitaine Route des Lasers
  4. French Agence Nationale de la Recherche [ANR 2010 JCJC 0909 01]

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We discuss a new, cheap, simple, reliable and safe growth process of Yb3+-doped Y2O3 and Lu2O3 single crystals by a flux method, using an original, nontoxic solvent in a growth setup operative in air and at half the melting temperature of cubic RE2O3. Several mm(3)-sized Yb3+-doped Y2O3 and Lu2O3 single crystals were grown, the orientation, purity and Yb3+-concentration of which were characterized by means of X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy and electron probe microanalysis (EPMA). A preliminary characterization of Yb3+-doped cubic RE2O3 (RE = Y,Lu) single crystals' basic spectroscopic and laser parameters is presented.

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