Journal
CRYSTENGCOMM
Volume 12, Issue 7, Pages 2185-2197Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/b926368n
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Funding
- European Community [238409]
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Cobalt oxide nanostructures are deposited by Chemical Vapor Deposition (CVD) on Si(100) substrates at temperatures between 300 and 550 degrees C, using for the first time a novel Co(II) adduct as molecular precursor [Co(hfa)(2)center dot TMEDA; hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate, TMEDA = N,N,N',N'-tetramethylethylenediamine]. The preparation is conducted either under dry (O-2) or wet (O-2 + H2O) oxygen atmospheres, at total pressures of 3.0 or 10.0 mbar. The obtained results evidence that, upon dry O-2 at 10.0 mbar, the initial nucleation of CoO occurs, followed by its progressive oxidation to Co3O4 during the subsequent growth stages. In a different way, cobalt monoxide can be selectively obtained at 3.0 mbar. In all cases, water vapor acts as an oxidant towards cobalt, favoring the formation of Co3O4 phases with a more pronounced {111} and {110}-type faceting. Structural, compositional and morphological characterization evidences the possibility of obtaining high purity CoO/Co3O4 systems with tailored morphological features, from films to columnar nanostructures, thus highlighting the potential and versatility of the proposed synthetic strategy.
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