Journal
CRYSTAL RESEARCH AND TECHNOLOGY
Volume 44, Issue 10, Pages 1083-1088Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/crat.200900513
Keywords
InGaAs quantum dots; In-distribution; TEM; CELFA
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Funding
- DFG Research Center for Functional Nanostructures (CFN)
- Ministry of Science, Research and the Arts of Baden-Wurttemberg [AZ: 7713.14-300]
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The In-concentration in InGaAs quantum dots located within a GaAs matrix was determined with the composition evaluation by lattice fringe analysis (CELFA) technique. However, the results obtained with this method cannot account for the three-dimensional shape of quantum dots and their embedding in GaAs. A correction procedure was developed that takes into consideration the shape of the quantum dots and the TEM sample thickness and quantum-dot size. After correction, In-concentration profiles show an increasing In-content towards the top of the quantum dots which is consistent with the effect of In-segregation and earlier studies using other experimental techniques.
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