4.3 Article

Flux growth and low temperature dielectric relaxation in piezoelectric Pb[(Zn1/3Nb2/3)(0.91)Ti-0.09]O-3 single crystals

Journal

CRYSTAL RESEARCH AND TECHNOLOGY
Volume 44, Issue 9, Pages 915-924

Publisher

WILEY-BLACKWELL
DOI: 10.1002/crat.200900294

Keywords

crystal growth; flux; X-ray diffraction; perovskites; piezoelectric; dielectric

Funding

  1. Department of Science & Technology for the Project Growth and quality control of high performance piezoelectric PZNT crystals [100/(IFD)/1637]

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Single crystals of Pb[(Zn1/3Nb2/3)(0.91)Ti-0.09]O-3 (PZNT 91/9) have been grown by flux method after modifications in temperature profile, flux ratio and addition of excess ZnO/B2O3 which resulted in enhanced perovskite yield (more than 95%). Only a few crystals showed the presence of pyrochlore phase/variation in composition. A comparative characterization of these crystals were carried out in respect of piezoelectric charge coefficient d(33), dielectric constant, ac conductivity and hysteresis loop after cutting and poling the crystals along [001] direction. The total activation energy for conduction has been found to increase with Ti-content in the sample. The effect of ZnO on growth behavior has been analyzed. A detailed analysis of PZNT (91:9) has been carried out at low temperature in respect of the various thermodynamic parameters related to the dielectric relaxation mechanism, like optical dielectric constant, static dielectric constant, free energy of activation for dipole relaxation, enthalpy of activation and relaxation time, have been calculated in the vicinity of transition temperature in the lower temperature region. The activation energy for relaxation at -10 and -49 degrees C have been found to be 0.09 and 0.02 eV respectively. The results were analyzed and a detailed dielectric analysis and low temperature relaxation behavior of PZNT crystals were interpreted. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhcim

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