Journal
CRYSTAL GROWTH & DESIGN
Volume 15, Issue 1, Pages 390-394Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cg501471z
Keywords
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Funding
- German Science Foundation (DFG)
- Helmholtz Association
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The structural perfection of the topological insulator (TI) Bi2Te3 is a key issue for its employment in future device applications. State of the art TIs, featuring exotic electronic properties, predominantly suffer from structural defects such as twin domains. A suppression of such domains in molecular beam epitaxy-grown Bi2Te3 thin films on Si(111) substrates-measured by X-ray diffraction pole figure scans-is presented in this paper. A numerical analysis of van der Waals potentials was performed, revealing the nucleation collinear with the Si(311) reflections of the Si(111) substrate to be energetically preferred.
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