Journal
CRYSTAL GROWTH & DESIGN
Volume 10, Issue 12, Pages 5117-5122Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cg100851b
Keywords
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Funding
- National Science Council, Taiwan [NSC-97-2120-M-007-008, NSC-97 3114-M 007-001, NSC 97 2112-M-213-003]
- Asian Office of Aerospace Research and Development of the U S Air Force
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High-quality Gd2O3 epi-films 5-20 nm thick have been grown on GaN (0001) using molecular beam epitaxy A detailed structural investigation was carried out by in situ reflection high energy electron diffraction cross sectional transmission electron microscopy, and X-ray scattering using a synchrotron radiation source The films consist of the high temperature monoclinic (m) phase with six rotational domains which can be easily mistaken for being the hexagonal phase All the domains follow the m-Gd2O3 ((2) over bar 01)< 020 > parallel to GaN (0001) < 11<(2)over bar>0 > orientational relationship
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